CEL NE3509M04-T2-A View larger

CEL NE3509M04-T2-A

CEL

NE3509M04-T2-A


Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET

$ 2.24

753 753 Items In Stock

Specification of NE3509M04-T2-A

Noise Figure 0.4 dB
Transistor Polarity N-Channel
Pd - Power Dissipation 150 mW
Gain 17.5 dB
P1dB 11 dBm
Mounting Style SMD/SMT
Package/Case FTSMM-4 (M04)
Manufacturer CEL
Packaging Reel
Forward Transconductance - Min 80 mS
Maximum Operating Temperature + 150 C
Manufacturer Part No. NE3509M04-T2-A
Vds - Drain-Source Breakdown Voltage 4 V
Product Category Transistors RF JFET
Alternate Part No. 551-NE3509M04-T2-A
Transistor Type HFET
Frequency 2 GHz
Vgs - Gate-Source Breakdown Voltage - 3 V
Brand CEL
Id - Continuous Drain Current 60 mA
Technology GaAs