CEL NE3515S02-T1C-A View larger

CEL NE3515S02-T1C-A

CEL

NE3515S02-T1C-A


Transistors RF JFET Super Low Noise Pseudomorphic

$ 4.36

1307 1307 Items In Stock

Specification of NE3515S02-T1C-A

Package/Case S0-2
Product Category Transistors RF JFET
Packaging Reel
Manufacturer CEL
P1dB 14 dBm
Brand CEL
Forward Transconductance - Min 70 mS
Id - Continuous Drain Current 88 mA
Manufacturer Part No. NE3515S02-T1C-A
Frequency 12 GHz
Technology GaAs
Vgs - Gate-Source Breakdown Voltage - 3 V
Noise Figure 0.3 dB
Gain 12.5 dB
Maximum Operating Temperature + 125 C
Mounting Style SMD/SMT
Transistor Type pHEMT
Alternate Part No. 551-NE3515S02-T1C-A
Vds - Drain-Source Breakdown Voltage 4 V
Pd - Power Dissipation 165 mW