CEL NE3509M04-A View larger

CEL NE3509M04-A



Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET

$ 3.24

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Specification of NE3509M04-A

Package/Case FTSMM-4 (M04)
Brand CEL
Gain 17.5 dB
Pd - Power Dissipation 150 mW
Alternate Part No. 551-NE3509M04-A
Noise Figure 0.4 dB
Gate-Source Cut-off Voltage - 0.5 V
Mounting Style SMD/SMT
Id - Continuous Drain Current 60 mA
Frequency 2 GHz
Vds - Drain-Source Breakdown Voltage 4 V
Technology GaAs
Transistor Type HFET
Manufacturer Part No. NE3509M04-A
Maximum Operating Temperature + 150 C
Manufacturer CEL
Product Category Transistors RF JFET
P1dB 11 dBm
Transistor Polarity N-Channel
Forward Transconductance - Min 80 mS
Vgs - Gate-Source Breakdown Voltage - 3 V